Skip to Main Content
Article navigation

Time and frequency domain complementary numerical models of microwave non‐linear circuits using two‐terminal active semiconductor devices are presented. Their main feature is the use of numerical one‐dimensional macroscopic physical models as semiconductor device models. Their respective capability is illustrated by some results of a study devoted to the optimization of millimeter‐wave avalanche diode frequency multipliers.

This content is only available via PDF.
You do not currently have access to this content.
Don't already have an account? Register

Purchased this content as a guest? Enter your email address to restore access.

Please enter valid email address.
Email address must be 94 characters or fewer.
Pay-Per-View Access
$41.00
Rental

or Create an Account

Close Modal
Close Modal