Issues

ACCURATE AND COMPUTATIONALLY EFFICIENT MODELING OF ION IMPLANTATION IN SINGLE‐CRYSTAL SILICON

Al F. Tasch
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THE EFFECT OF A SCREENING OXIDE ON ION IMPLANTATION STUDIED BY MONTE CARLO SIMULATIONS

G. Hobler; H. Pötzl
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A MODEL FOR TRANSIENT IMPACT IONISATION

DC Herbert
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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF SILICON

G.V. Gadiyak; J.L. Korobitsina; V.I. Kranarenko
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Selection of Optimal Meshes for the Solution of Nonlinear Dopant Diffusion Problems

Ke CHEN
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MOPIT: OPEN SYSTEM FOR DEVICE AND TECHNOLOGY SIMULATION

A.L. Alexsandrov; P.A. Androsenko; V.M. Bedanov; A.M. Bekesheva; E.E. Dagnan; O.E. Dnitrieva; G.V. Gadiyak; V.P. Ginkin; M.S. Ivanov; Zh.L. Korobitsina; T.M. Lukhanova; M.S. Obrekht; A.A. Shinanskiy; V.A. Schveigert; I.V. Schveigert; E.G. Tishkovsky; Yu.P. Zhydkov
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A COMPARISON OF THE TRANSMISSION COEFFICIENT AND THE WIGNER FUNCTION APPROACHES TO FIELD EMISSION

K.L. Jensen; A.K. Ganguly
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INCLUSION OF ELECTRON‐PLASMON SCATTERING IN ENSEMBLE MONTE CARLO SIMULATIONS

Nabil S. Mansour; Kevin F. Brennan
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INFLUENCE OF FORWARD SCATTERING ON NONEQUILIBRIUM TRANSPORT OF ELECTRONS IN COMPOUND SEMICONDUCTORS

Ming‐C. Cheng
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EFFECTS OF LATTICE TEMPERATURE IN MOSFET ANALYSIS UNDER NON‐ISOTHERMAL CONDITIONS

Hirokazu Hayashi; Ryo Dang
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IMPLEMENTATION OF A HYDRODYNAMIC TRANSIENT MODEL FOR SIMULATING HIGH SPEED PHOTODETECTORS

Z.‐M. Li; K.‐W. Chai; S.P. McAlister; J. Simmons
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SIMULATION OF INTERFACE COUPLING EFFECTS IN ULTRA—THIN SILICON ON INSULATOR MOSFET's

A. Hassein—Bey; S. Cristoloveanu
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Coupled device‐circuit simulation using energy‐momentum device models

MICHAEL SEVER
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TIME AND FREQUENCY DOMAIN NUMERICAL PHYSICAL MODELLING OF TWO TERMINAL MICROWAVE NON LINEAR CIRCUITS APPLIED TO MILLIMETER‐WAVE AVALANCHE DIODE FREQUENCY MULTIPLIERS

C. DALLE; M.R. FRISCOURT; P.A. ROLLAND
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SIGNAL DELAY FOR GENERALLY INTERCONNECTED DISTRIBUTED STRUCTURES

CORNELIU A. MARINOV; JUKKA‐PEKKA SANTANEN
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Fast models for statistical process/device simulation

Andrzej Pfitzner; Miroslaw Grygolec
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