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A hydrodynamic semiconductor device simulator, DYNA, is introduced. A new relaxation time evaluation scheme for two‐valley semiconductors is proposed to account for the dependence of the electron mobility on the impurity scattering. Some robust solution methods are used in the simulator for treating the highly nonlinear system of equations. The simulation results for a nonuniformly‐doped GaAs MESFET are also shown.
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© MCB UP Limited
1993
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