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Volume 10, Issue 4
1 April 1991
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 10, Issue 4
Review Article| April 01 1991

SEMICONDUCTOR DEVICE MODELLING FOR HETEROJUNCTIONS STRUCTURES WITH MIXED FINITE ELEMENTS Available to Purchase

F. Hecht;
F. Hecht
INRIA Domaine de Voluceau ‐ Rocquencourt BP 105 78153 LE CHESNAY FRANCE
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A. Marrocco;
A. Marrocco
INRIA Domaine de Voluceau ‐ Rocquencourt BP 105 78153 LE CHESNAY FRANCE
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E. Caquot;
E. Caquot
CNET 196 avenue H.Ravera 92220 BAGNEUX FRANCE
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M. Filoche
M. Filoche
CNET 196 avenue H.Ravera 92220 BAGNEUX FRANCE
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1991
COMPEL (1991) 10 (4): 425–438.
https://doi.org/10.1108/eb051718

Numerical simulation of the static semiconductor device equations using mixed finite element for the approximation and A.D.I. techniques (Douglas‐Rachford with local time steps) for the solution is presented in this paper. The formulation with electrostatic potential φ and quasi‐Fermi levels φn,φp is used.

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© MCB UP Limited
1991
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References
5th ICEG Environmental Geotechnics: Opportunities, Challenges and Responsibilities for Environmental Geotechnics: Proceedings of the ISSMGE’s fifth international congress organized by the Geoenvironmental Research Centre, Cardiff University and held at Cardiff City Hall on 26–30th June 2006
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THE PHYSICS OF FAST REACTOR OPERATION AND DESIGN

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