MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS

Some results related to the algorithmic behaviour in semiconductor devices numerical simulations (‐static case‐), using mixed finite elements and operator splitting techniques have been presented in. The drift‐diffusion model written with the electrostatic potential φ and the quasi‐Fermi levels φn and φp is used.