Issues

AN ENERGY TRANSPORT MODEL FOR HBTS USING ENERGY‐ AND COMPOSITION‐DEPENDENT TRANSPORT PARAMETERS

Kazushige Horio; Akio Nakatani
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ACCURACY OF MODELLING NON‐EQUILIBRIUM ELECTRON TRANSPORT IN SILICON USING HYDRODYNAMIC TRANSPORT EQUATIONS

Ming‐C. Cheng; Ying Wen
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A NECESSARY CONDITION ON DISCRETIZATION SCHEMES FOR DEVICE SIMULATION

F. MONTRONE; R. BULIRSCH
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A NEW APPROACH OF THE BOX METHOD ADAPTED TO ANY CONVEX POLYGONAL MESH

S. Mottet; P.F. Vermeulen
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MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES

A. EL Doukili; A. Marrocco
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THERMALLY INDUCED FAILURE IN GaAs TRANSISTORS EXPOSED TO α PARTICLE IRRADIATION

C. Moglestue; F. Buot; W.T. Anderson
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MONTE CARLO MODELLING OF 0.1µm DELTA‐DOPED MOSFETs

R.W. Kelsall; A.G. O'Neill
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A GENERALIZED SELF‐SCATTERING TECHNIQUE FOR MONTE CARLO SIMULATION SUITABLE FOR SIMD ARCHITECTURES

Henry Sheng; Roberto Guerrieri; Alberto Sangiovanni‐Vincentelli
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A NUMERICAL MODEL OF HETEROJUNCTION BIPOLAR TRANSISTOR HIGH FREQUENCY PERFORMANCE FOR DEVICE DESIGN

G. Khrenov; V. Ryzhii; S. Kartashov
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ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD

B.P. Mathur; K.I. Arshak; D. Mc Donagh; A. Arshak
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AN EFFICIENT RESPONSE SURFACE TECHNIQUE FOR INVESTIGATING CMOS PROCESS RELATED EFFECTS ON CIRCUIT ELECTRICAL PERFORMANCE

A.E. Theron; M. Du Plessis
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TWO‐CARRIER QUANTUM WELL TRANSPORT MODEL WITH APPLICATION TO SEMICONDUCTOR OPTICAL AMPLIFIERS

J.L. Pleumeekers; T. Mercier; F. Clérot; S. Mottet
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THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION

M. Gault; H. Matsuura; K. Furuya; P. Mawby; M.S. Towers
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DETERMINISTIC PARTICLE SIMULATION OF MULTIHETEROJUNCTION SEMICONDUCTOR DEVICES: THE SEMICLASSICAL AND QUANTUM CASES

E. Cebrián; F.J. Mustieles
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THERMOMAGNETIC ANALYSIS OF SEMICONDUCTOR DEVICES USING TRENDY

G. Dima; B. Krabbenborg; T. Mouthaan; Profirescu; H. Wallinga
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THERMO‐ELECTRIC STUDY OF THE TRENCH‐GATE POWER VDMOS TRANSISTOR

J. Zeng; P.A. Mawby; M.S. Towers; K. Board
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SIMULATION OF TRANSIENT SELF‐HEATING DURING POWER VDMOS TRANSISTOR TURN‐OFF

Z.R. Hu; P.A. Mawby; M.S. Towers; K. Board
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MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS

F. Hecht; A. Marrocco
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POWER 2D: A DEDICATED TOOL FOR TWO‐DIMENSIONAL SIMULATIONS OF OFF‐STATE POWER STRUCTURES

Nicolas NOLHIER; Evgeny STEFANOV; Georges CHARITAT; Pierre ROSSEL
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COMPARISON OF COUPLED AND DECOUPLED METHODS FOR SEMICONDUCTOR DEVICE MODELING

M.S. Obrecht; E.L. Heasell; M.I. Elmasry
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EFFICIENT TRANSIENT SIMULATION OF DISTRIBUTED INTERCONNECTS

Jose E. Schutt‐Aine; Dmitri Kuznetsov
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TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs

A. Caddemi; M. Sannino; G. Mogavero
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UNIFIED SIMULATION MODEL FOR JUNCTION‐CONTROLLED FIELD‐EFFECT TRANSISTRORS

Frank Schwierz; Valentin Nakov; Matthias Roßberg
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A NON QUASI‐STATIC EMPIRICAL MODEL OF THE POWER PIN DIODE FOR CIRCUIT SIMULATION

Margaret E Clarke; Suhail Rahim
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NUMERICAL ANALYSIS OF TRANSIENT TEMPERATURE DISTRIBUTIONS DURING LASER SOLDERING

J. Nicolics; G. Hobler
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EFFICIENT SIMULATION OF 3‐D STRESS DISTRIBUTIONS AT TRENCH STRUCTURES CAUSED BY THERMAL MISMATCH OF TRENCH FILLING AND SILICON SUBSTRATE

R. Slehobr; G. Hobler
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TOPOGRAPHY SIMULATION IN PHOTOLITHOGRAPHY USING FINITE ELEMENT ANALYSIS AND A MODIFIED STRING ALGORITHM

K.I. Arshak; D. McDonagh; B.P. Mathur; A. Arshak
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NUMERICAL MODELLING OF A NOVEL TWIN‐RIDGE WAVEGUIDE OPTICAL AMPLIFIER

L Sabesan; AK Ray; P Mawby; M Towers
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NUMERICAL INVESTIGATION OF CARRIER TRANSPORT IN DOUBLE HETEROSTRUCTURE: AlGaAs/GaAs PNPN Bistable Device

Hamid Z. Fardi
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