Modelling and designing modern power devices is more and more often performed with two dimensional numerical simulation of basic semiconductor equations. Well‐known simulators, such as PISCES, are powerful and versatile tools, including a lot of physical mechanisms and simulation possibilities. However, this ability to address a very wide range of problems is often paid for by long CPU times and long training periods. These considerations have led us to develop a new two‐dimensional simulator targeted for a very specific goal: the study of the voltage handling capability of high voltage structures. Solving only the Poisson equation allows implementation of very fast numerical algorithms. The calculus of the breakdown voltage is performed by the classical evaluation of ionization integrals, incorporating a new fast iterative technique and an original ionization integral paths determination. Simulation results and comparison with commercial simulator will be presented.
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1 April 1994
Review Article|
April 01 1994
POWER 2D: A DEDICATED TOOL FOR TWO‐DIMENSIONAL SIMULATIONS OF OFF‐STATE POWER STRUCTURES
Nicolas NOLHIER;
Nicolas NOLHIER
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS 7 Avenue du Colonel Roche 31077 Toulouse Cedex, France
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Evgeny STEFANOV;
Evgeny STEFANOV
Permanent address: Department of Process & Device Modelling, Institute of Microelectronics, Boul. Tzarigradsko chaussée 7th km, 1784 Sofia, Bulgaria
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Georges CHARITAT;
Georges CHARITAT
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS 7 Avenue du Colonel Roche 31077 Toulouse Cedex, France
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Pierre ROSSEL
Pierre ROSSEL
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS 7 Avenue du Colonel Roche 31077 Toulouse Cedex, France
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Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© MCB UP Limited
1994
COMPEL (1994) 13 (4): 771–783.
Citation
NOLHIER N, STEFANOV E, CHARITAT G, ROSSEL P (1994), "POWER 2D: A DEDICATED TOOL FOR TWO‐DIMENSIONAL SIMULATIONS OF OFF‐STATE POWER STRUCTURES". COMPEL, Vol. 13 No. 4 pp. 771–783, doi: https://doi.org/10.1108/eb051894
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