ETCH PROFILE EVOLUTION IN LOW PRESSURE RF PLASMA WITH AXIAL MAGNETIC FIELD

The dry development of a photoresist is modelled using the analytical solution of the Boltzmann equation. It is proposed that at very low pressure and in the presence of a magnetic field, the etch rate of the resist can be calculated by integrating the ion flux. The simulation results illustrates improvement in both microuniformity and macrouniformity when the resist is etched under these process conditions.