Modelling and computer simulation study of laser‐plasma interaction in semiconductor

Computer simulations were done extensively in order to study non‐linear dynamics of laser‐plasma interaction in InSb semiconductor. We constructed the modified Duffing kind of non‐linear semiconductor plasma oscillator equation. Collision frequency is found to be dominant parameter to influence the bifurcation, chaos, hysteresis and bistable effects of plasma wave. Small windows of higher period cascade above the critical value of laser parameter (α₁α₂) in the chaos region are observed. Laser‐plasma exhibits too much chaotic regime at lower value of laser driving frequency (δ). Hysteresis and bistable regions of plasma wave are presented and the conditions for their occurence are identified. The unstable regions completely merge at higher value of effective collision frequency (γ).