Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode

Hydrodynamic‐like models are commonly used for describing carrier transport in semiconductor devices. One major problem of this formulation is how to model the production terms. In this paper the relaxation‐time approximation and the moments expansion of the production terms are checked with Monte Carlo simulations for a one dimensional n⁺ – n – n⁺ silicon diode in the spherical parabolic band approximation.