The purpose of this paper is to present a novel n‐buried partial silicon‐on‐nothing (SON) structure of radio frequencies (RF) power lateral double‐diffused metal‐oxide‐semiconductor (LDMOS) and analyze its RF characteristics.
The small‐signal equivalent circuit for RF power LDMOS method is used to analyze the proposed structure and the simulation and optimization are done using 2D simulator MEDICI.
This improved structure is clearly decreasing drain‐substrate parasitic capacitance. At 1 dB compression point, its output power, the power‐added efficiency and the breakdown voltage is higher than that of the conventional LDMOS.
This paper usefully shows how SON having low‐dielectric constant can reduce the horizontal drain field and the drain‐substrate capacitance, and increase the breakdown voltage as a result.
