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Volume 33, Issue 4
1 July 2014
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering Cover Image for Volume 33, Issue 4
Editors
Jan Sykulski
Jan Sykulski
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Research Article| July 01 2014

Heat generation in silicon nanometric semiconductor devices Available to Purchase

Orazio Muscato;
Orazio Muscato
Dipartimento di Matematica e Informatica, Universita’ di Catania, Italy
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Wolfgang Wagner;
Wolfgang Wagner
Weierstrass Institute for Applied Analysis and Stochastics, Berlin, Germany
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Vincenza Di Stefano
Vincenza Di Stefano
Dipartimento di Matematica e Informatica, Universita’ di Catania, Italy
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Author & Article Information
Publisher: Emerald Publishing
Online ISSN: 2054-5606
Print ISSN: 0332-1649
© Emerald Group Publishing Limited
2014
COMPEL (2014) 33 (4): 1198–1207.
https://doi.org/10.1108/COMPEL-11-2012-0327
Purpose

– The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.

Design/methodology/approach

– Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation.

Findings

– A new estimator of the heat generation rate to be used in MC simulations has been found.

Originality/value

– The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.

Keywords:
Semiconductor devices, Monte Carlo simulation, Heating phenomenon
© Emerald Group Publishing Limited
2014
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