...‐control and capacitance‐voltage characteristics of quantum wire transistors. Design/methodology/approach The paper presents a numerical formulation employing a non‐uniform finite difference discretization scheme, in which the wavefunctions and electronic energy levels are obtained by solving...

...TianQuan James Deng; Tang Ying; Li Wan‐Qing Purpose The purpose of this paper is to introduce trench termination for high power buried‐gate static induction transistor (SIT) comprising three parts, which can inhibit the reverse leakage current substantially and paradisaical current. The simplified...

...Michał Tadeusiewicz; Stanisław Hałgas Purpose Developing an efficient second‐order integration method of transient analysis of nonlinear dynamic circuits which overcomes the main drawback of the trapezoidal rule. Design/methodology/approach Dynamic circuits including transistors...

...François Lefèvre; Nabil Nassif We introduce the drift‐diffusion model with appropriate jump conditions at the junction of the MODFET transistor (AlGaAs/GaAs). We propose a quasi‐variational inequality (QVI) model for this device. We assume that the electron density is bounded and piecewise...