In this paper, thermal analysis for a 1,200 A, 3.3 kV insulated gate bipolar transistor (IGBT) module was investigated and analysed using the three‐dimensional transmission line matrix (3D‐TLM) method. This paper also reviews the present status of the use of various thermal heat spreaders such as AlSiC MMC, Cu‐Mo and graphite‐Cu MMC and compares these with copper based heat spreaders and the use of aluminium nitride (AlN), diamond and BeO as substrates and their effect to dissipate the heat flux in heat sources localised in IGBT module design. The TLM method was found to be a versatile tool which is ideally suited to the modelling of many power electronic devices and which proved very useful in the study of transient thermal effects in a variety of device structures.
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1 September 2003
Conceptual Paper|
September 01 2003
A three‐dimensional transmission line matrix (TLM) simulation method for thermal effects in high power insulated gate bipolar transistors
R. Hocine;
R. Hocine
Department of Electronics Engineering, University of Sciences and Technology of Oran, Algeria
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D. Lim;
D. Lim
Department of Electronics Engineering, University of Sciences and Technology of Oran, Algeria
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S.H. Pulko;
S.H. Pulko
School of Engineering, University of Hull, Hull, UK
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M.A. Boudghene Stambouli;
M.A. Boudghene Stambouli
Department of Electronics Engineering, University of Sciences and Technology of Oran, Algeria
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A. Saidane
A. Saidane
Department of Electrical Engineering, ENSET, Oran, Algeria
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Publisher: Emerald Publishing
Online ISSN: 1758-602X
Print ISSN: 0305-6120
© MCB UP Limited
2003
Circuit World (2003) 29 (3): 27–32.
Citation
Hocine R, Lim D, Pulko S, Boudghene Stambouli M, Saidane A (2003), "A three‐dimensional transmission line matrix (TLM) simulation method for thermal effects in high power insulated gate bipolar transistors". Circuit World, Vol. 29 No. 3 pp. 27–32, doi: https://doi.org/10.1108/03056120310460793
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