This paper describes effective thin‐film structure barrier metals for use as eutectic solder bumps. Shear strength and bump interconnection resistance were evaluated. The mutual diffusion in metals was investigated. Barrier metal structures —Cu/Ti,Ni/Ti and Cu/Cr—were evaluated after ageing. The Ni/Ti structure has good reliability according to ageing test results. Pd is used for improvement of solder wettability and as an oxidisation barrier. Consequently, it was concluded that a thin‐film Pd/Ni/Ti barrier metal is suitable for use as eutectic solder bumps. The broken interfaces of the solder bumps were analysed by scanning auger electron spectrometry. In the thin‐film Cu/Ti structure, decrease in the shear strength is caused by three mechanisms, as determined from the broken interface analysis. The three mechanisms are mixed metal formation, Ti oxidisation and diffusion between barrier metals and Al. Furthermore, TCT and PCT were carried out on these eutectic solder bumps to confirm the interconnection reliability. The TCT and PCT results prove that electrical connection is stable.
Article navigation
1 December 1997
Research Article|
December 01 1997
Effectiveness of Thin‐film Barrier Metals for Eutectic Solder Bumps
S. Honma;
S. Honma
Semiconductor Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
K. Tateyama;
K. Tateyama
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
H. Yamada;
H. Yamada
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
K. Doi;
K. Doi
Semiconductor Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
N. Hirano;
N. Hirano
Semiconductor Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
T. Okada;
T. Okada
Semiconductor Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
H. Aoki;
H. Aoki
Semiconductor Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
Y. Hiruta;
Y. Hiruta
Semiconductor Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
T. Sudo
T. Sudo
Manufacturing Engineering Research Center, Toshiba Corporation, Yokohama, Japan
Search for other works by this author on:
Publisher: Emerald Publishing
Online ISSN: 1758-812X
Print ISSN: 1356-5362
© MCB UP Limited
1997
Microelectronics International (1997) 14 (3): 47–50.
Citation
Honma S, Tateyama K, Yamada H, Doi K, Hirano N, Okada T, Aoki H, Hiruta Y, Sudo T (1997), "Effectiveness of Thin‐film Barrier Metals for Eutectic Solder Bumps". Microelectronics International, Vol. 14 No. 3 pp. 47–50, doi: https://doi.org/10.1108/13565369710368151
Download citation file:
Sign in
Don't already have an account? Register
ICE Member Sign In
Log inPurchased this content as a guest? Enter your email address to restore access.
Please enter valid email address.
Email address must be 94 characters or fewer.
Pay-Per-View Access
$41.00
Rental
This article is also available for rental through DeepDyve.
New and popular articles
Suggested Reading
Design Optimisation of Integrated Circuit Thin‐film Resistors with Slits and Curved Boundaries
Microelectronics International (August,1996)
Moisture Ambient Effects on an Al2O3 Thin‐thick Film Overlaid Parallel Coupled Broad‐band Microstrip Filter
Microelectronics International (December,1997)
Thermal & mechanical simulation and experiments in micro-electronics and micro-systems
Microelectronics International (December,2002)
Adept to acquire Oasis
Industrial Robot (July,1999)
Online gauge improves product consistency
Sensor Review (December,2001)
Related Chapters
Impact of the COVID-19 Pandemic on the Electronic Industry in Russia
Current Problems of the World Economy and International Trade
Recommended for you
These recommendations are informed by your reading behaviors and indicated interests.
