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Journal Articles

Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique

Shireen Mohammed Abed, Sabah M. Mohammad, Zainuriah Hassan, Aminu Muhammad, Suvindraj Rajamanickam

Microelectronics International (2023) 40 (1): 35–45.

https://doi.org/10.1108/MI-03-2022-0046

Published: 23 August 2022

View article titled, Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique

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Journal Articles

Fabrication of fluorine and silver co-doped ZnO photodetector using modified hydrothermal method

Aminu Muhammad, Sabah M. Mohammad, Zainuriah Hassan, Suvindraj Rajamanickam, Shireen Mohammed Abed, M.G.B. Ashiq

Microelectronics International (2023) 40 (1): 1–7.

https://doi.org/10.1108/MI-03-2022-0045

Published: 14 June 2022

View article titled, Fabrication of fluorine and silver co-doped ZnO photodetector using modified hydrothermal method

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Journal Articles

Guest editorial

Hock Jin Quah, Sha Shiong Ng, Way Foong Lim, Zainuriah Hassan

Microelectronics International (2021) 38 (3): 85.

https://doi.org/10.1108/MI-08-2021-0075

Published: 23 August 2021

View article titled, Guest editorial

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Journal Articles

Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

Nur Atiqah Hamzah, Mohd Anas Ahmad, Rahil Izzati Mohd Asri, Ezzah Azimah Alias, Mohd Ann Amirul Zulffiqal Md Sahar, Ng Sha Shiong, Zainuriah Hassan

Microelectronics International (2021) 38 (3): 127–134.

https://doi.org/10.1108/MI-02-2021-0016

Published: 02 August 2021

View article titled, Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

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Journal Articles

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Mohd Ann Amirul Zulffiqal Md Sahar, Zainuriah Hassan, Sha Shiong Ng, Way Foong Lim, Khai Shenn Lau, Ezzah Azimah Alias, Mohd Anas Ahmad, Nur Atiqah Hamzah, Rahil Izzati Mohd Asri

Microelectronics International (2021) 38 (3): 119–126.

https://doi.org/10.1108/MI-02-2021-0017

Published: 19 July 2021

View article titled, Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

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Journal Articles

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Ahmad Sauffi Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, Way Foong Lim, Muhd Azi Che Seliman, Christyves Chevallier, Nicolas Fressengeas

Microelectronics International (2021) 38 (3): 105–112.

https://doi.org/10.1108/MI-02-2021-0018

Published: 08 July 2021

View article titled, The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

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Journal Articles

Sol-gel-derived gallium nitride thin films for ultraviolet photodetection

Chee Yong Fong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, Zainuriah Hassan

Microelectronics International (2019) 36 (1): 8–13.

https://doi.org/10.1108/MI-12-2017-0074

Published: 07 January 2019

View article titled, Sol-gel-derived gallium nitride thin films for ultraviolet photodetection

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Journal Articles

Growth of InN thin films on different Si substrates at ambient temperature

Maryam Amirhoseiny, Zainuriah Hassan, Sha Shiong Ng

Microelectronics International (2013) 30 (2): 63–67.

https://doi.org/10.1108/13565361311314430

Published: 26 April 2013

View article titled, Growth of InN thin films on different Si substrates at ambient temperature

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Journal Articles

Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO₃

Ang Chai Im, Leonard Lu Tze Jian, Ooi Poh Kok, Suriani Yaakob, Ching Chin Guan, Ng Sha Shiong, Zainuriah Hassan, Haslan Abu Hassan, Mat Johar Abdullah

Microelectronics International (2012) 29 (2): 96–100.

https://doi.org/10.1108/13565361211237699

Published: 04 May 2012

View article titled, Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO3

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Journal Articles

X‐ray diffraction studies of Al_xGa_1−xN (0≤x≤1) ternary alloys grown on sapphire substrate

Ng Sha Shiong, Ching Chin Guan, Zainuriah Hassan, Haslan Abu Hassan

Microelectronics International (2011) 28 (2): 44–48.

https://doi.org/10.1108/13565361111127359

Published: 10 May 2011

View article titled, X‐ray diffraction studies of AlxGa1−xN (0≤x≤1) ternary alloys grown on sapphire substrate

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Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique

Fabrication of fluorine and silver co-doped ZnO photodetector using modified hydrothermal method

Guest editorial

Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Sol-gel-derived gallium nitride thin films for ultraviolet photodetection

Growth of InN thin films on different Si substrates at ambient temperature

Fabrication of porous ZnO thin films using wet chemical etching with 0.5% HNO₃

X‐ray diffraction studies of Al_xGa_1−xN (0≤x≤1) ternary alloys grown on sapphire substrate

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