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Keywords: Aluminum oxynitride
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Journal Articles
Journal:
Microelectronics International
Microelectronics International (2020) 37 (2): 103–107.
Published: 05 March 2020
... for developing novel power devices based on wide bandgap semiconductors such as silicon carbide and gallium nitride. One of the alternatives is applying aluminum oxynitride (AlOxNy) as a gate dielectric because of its high dielectric constant, high thermal stability and a bandgap offset...
