Keywords: Anisotropic
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Journal Articles
Microelectronics International (2014) 31 (2): 78–85.
Published: 29 April 2014
... coupled with shallow anisotropic etching. Design/methodology/approach – A 5-inch p-type silicon-on-insulator (SOI) coated with 250nm layer and Photoresist (PR) with thickness of 400nm is coated in order to make pattern transfer via binary mask, after the exposure and development, a resist pattern...

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