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Keywords: Dark current
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Journal Articles
Journal:
Microelectronics International
Microelectronics International (2012) 29 (3): 136–140.
Published: 27 July 2012
...Ying Wei; Xueyuan Cai; Jinzhi Ran; Jianhong Yang Purpose The purpose of this paper is to investigate the dependence of dark current on threading dislocations (TDs) in relaxed Ge layer for Ge/Si heterojunction photodetectors. Design/methodology/approach The analysis of the effects of TDs...
