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Journal Articles
Microelectronics International (2023) 40 (4): 233–238.
Published: 24 October 2022
... concentration on the coefficient of diffusion was introduced. The influence of concentration of boric acid in the dopant solution on the concentration profile was also considered. Solar cell Boron diffusion Doping process Concentration profile fni = correction factor...
Journal Articles
Microelectronics International (2019) 36 (3): 104–108.
Published: 20 June 2019
...Wojciech Filipowski Purpose The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which...

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