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Keywords: Flat power
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Journal Articles
Journal:
Microelectronics International
Microelectronics International (2013) 30 (1): 19–23.
Published: 18 January 2013
... technique. Design/methodology/approach Two 4 mm gate periphery GaN HEMTs are parallel combined and internally matched with multi‐section reactive impedance transformers at the input and output networks. The output matching network is designed at the upper frequency of the design band for a flat power...
