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Keywords: Oxide
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Journal Articles
Journal:
Microelectronics International
Microelectronics International (2003) 20 (2): 24–31.
Published: 01 August 2003
...Jean‐Yves Rosaye; Pierre Mialhe; Jean‐Pierre Charles The present experiments are intended to help characterize defects in very thin MOS oxide and at its Si/SiO2 interface using a temperature‐dependent electrical characterization method, high low temperature capacitance voltage method...
