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Keywords: Oxynitride
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Journal Articles
Microelectronics International (1998) 15 (1): 39–42.
Published: 01 April 1998
... capacitances, integrated low TCR NiCr resistors, low resistance (13mΩper square) TiW/Cu/TiW metallisation, high quality PECVD oxynitride (SiON) insulation layers, which are optimised to a low stress content, and a new wet‐dry etch technique for the vias. The module is able to handle 200MHz clock...

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