... to 13.5 GHz. Originality/value This paper provides useful information for the internally matched GaN HEMTs. Xinyu Liu can be contacted at: xyliu@ime.ac.cn © Emerald Group Publishing Limited 2013 Bandwidths Power transistors Ku‐band Compensated matching Flat power...

...) Power transistors Semiconductor devices Owing to the high breakdown fields, high peak electron and saturation drift velocities and high sheet charge densities of the GaN material, the GaN‐based high electron mobility Transistors (HEMTs) have shown excellent performance in high‐power, high...

... savings. Indeed, it is established that the packages commonly used in either microelectronics or power electronics domain can be handled as a plane of multi‐layered structures. Semiconductor devices Power transistors Simulation Thermal measurement Modelling © Emerald Group Publishing...

... The paper proposes a SRAM cell to reduce the power in write “0” as well as write “1”operation by introducing two tail transistors. C.M.R. Prabhu can be contacted at: c.m.prabu@mmu.edu.my © Emerald Group Publishing Limited 2009 Integrated circuits Power transistors The power...

.... Low voltage Power transistors © Emerald Group Publishing Limited 2006 A similar analysis, as in Sections 2.1 and 2.2, gives the output voltage of a repeater driven resistive interconnect for a falling ramp input. The time dependence of V_outin the various regions...