...Zulkifli Azman; Nafarizal Nayan; Megat Muhammad Ikhsan Megat Hasnan; Nurafiqah Othman; Anis Suhaili Bakri; Ahmad Shuhaimi Abu Bakar; Mohamad Hafiz Mamat; Mohd Zamri Mohd Yusop Purpose This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride...

...Dominik Jurków; Grzegorz Lis Purpose The purpose of this paper is to present the application of low temperature cofired ceramics (LTCC) technology in the fabrication of a novel electronic device, which consists of an antenna amplifier integrated with temperature stabilizer. The temperature...

...Muhammad Kashif; Uda Hashim; Eaqub Ali; Ala'eddin A. Saif; Syed Muhammad Usman Ali; Magnus Willander Purpose The purpose of this paper is to investigate the electrical transport mechanism of the Al‐doped ZnO nanorods at different temperatures by employing impedance spectroscopy. Design...

... temperature exert significant influence on the electrical properties of the WSi films. Research limitations/implications By tuning the sputtering parameters, the electrical properties of the WSi films can be optimized and the film resistivity can be reduced significantly. Practical implications...

... The circuit concept is discussed. A voltage‐controlled oscillator (VCO) and buffer circuit together with VCS circuit are built to prove the concept. Though the VCS circuit employs no array of diode like standard bandgap circuit, it still employs the concept of proportional to absolute temperature (PTAT...

...C. Salame; R. Habchi Purpose The purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation. Design/methodology/approach The MOSFET device parameters analysis was done by numerical analysis based on a double exponential...

... V_DS value in order to prevent sudden breakdown. Switching time parameters were measured at different temperatures and up to 300°C. Findings The experimental results show that the device rise time decreases significantly for the first period of stress time at room temperature, which increases...

...Kaiçar Ammous; Slim Abid; Anis Ammous Purpose The paper aims to focus on the semiconductor temperature prediction in the multichip modules by using a simplified 1D model, easy to implement in the electronic simulation tools. Design/methodology/approach Accurate prediction of temperature...

... and CaTi_0.8Co_0.2O₃ were synthesized by solid‐state reaction. Ceramic thermistor materials were sintered in the temperature range 1,300‐1,400°C. The synthesized powders were used for fabrication of thick film pastes and thermistors fired at 1,100‐1,250°C. Resistance‐temperature characteristics of the ceramic samples...

...Y. Srinivasa Rao Purpose The paper aims to study the variation of electrical properties like electrical resistivity and current noise of a polymer thick film resistor, namely, PVC‐graphite thick film resistor, with parameters such as volume fraction, grain size, temperature and high voltage...

...R. Habchi; C. Salame; B. Nsouli; P. Mialhe Purpose This paper presents measurements of device switching parameters performed on a commercial power MOSFET under high temperature conditions, along with the inverse and direct source‐drain current. Design/methodology/approach Device temperature...

...), copper powders, and glasses for copper termination paste development. The effect of various organics and glasses on the drying as well as fired properties of different copper termination pastes is discussed. The effect of drying temperature and drying time on the fired properties of the copper...

... and austenitic steels have been investigated, together with different resistive and insulative compositions. The temperature coefficient of resistance of the devices has been shown to be a complex function of device thickness, surface area and the difference between the thermal coefficients of expansion...

... strained beyond this point. Repeated cycles of loading then produced a certain level of stability until the previous maximum value of applied strain was exceeded. Temperature coefficient of resistance (TCR) measurements showed the devices to exhibit characteristics that depend significantly on the device...

... the effect on the repeatability of the device characteristics due to different choices of materials, thicknesses of printed layers, firing regimes and geometry of the gauges. In particular the effects of load and temperature on the offset and gain characteristics of a variety of different sensor...