...Yasin Özcelep; Ayten Kuntman Purpose The purpose of this paper is to propose a time‐dependent mobility degradation model which is independent from the process or operating conditions. Design/methodology/approach In total, four transistors under test are electrically stressed using constant...

... under these two types of stress are referred to as the variation of the gate oxide‐trapped charge and interface trap densities. Originality/value This paper presents new and original experiments run over a number of metal‐oxide semiconductor field effect transistor devices to compare the effects...

... Group Publishing Limited 2010 Electronic engineering Integrated circuits Amplifiers Transistors In system level design, radio frequency (RF) platform‐based design is normally applied to reduce design cycles (Baltus, 2006). It is often for designing a multi‐band, multi‐mode integrated...

...Vinod Kumar Khanna Purpose To provide an insight of the intricacies of ion‐sensitive field‐effect transistor (ISFET) encapsulation and describe the presently available packaging solutions, indicating how the packaging requirements can be complied for various applications. Design/methodology...

... for L≤0.25 μm. This result only shows that for sub‐micron device, oxide thickness has to play a little role in breakdown mechanism. © Emerald Group Publishing Limited 2005 Electronically operated devices Transistors Breakdown voltage Owing to continuous scaling down...