Thin films of (TeO₂)_1−x(In₂O₃)_x as gamma radiation sensors

Thin films of tellurium dioxide (TeO₂) and indium oxide (In₂O₃) mixtures were investigated for γ‐radiation dosimetry purpose. Samples were fabricated using thermal vacuum evaporation technique. The electrical properties of mixed oxides thin films [(TeO₂)_1−x(In₂O₃)_x, where x=0 and 10 per cent by weight] and their changes under the influence of γ‐radiation were investigated. Samples with contacts having a planar structure showed increase in the values of current with the increase in radiation dose up to a certain dose level. Thin films in the form of pn‐junctions were fabricated with (TeO₂)_1−x(In₂O₃)_x as p‐type material and sulphur as n‐type material. These pn‐junctions exhibited Zener diode behaviour. The current‐voltage characteristics for as‐deposited and γ‐irradiated samples were recorded. The level of response for all the fabricated devices was found to be highly dependent on the composition of the exposed material.