The smart image sensor (SIS) which integrated with both sensor and smart processor has been widely applied in vision-based intelligent perception. In these applications, the linearity of the image sensor is crucial for better processing performance. However, the simple source-follower based readout circuit in the conventional SIS introduces significant nonlinearity. This paper aims to design a low-power in-pixel buffer circuit applied in the high-linearity SIS for the smart perception applications.
The linearity of the SIS is improved by eliminating the non-ideal effects of transistors and cancelling dynamic threshold voltage that changes with the process variation, voltage and temperature. A low parasitic capacitance low leakage switch is proposed to further improve the linearity of the buffer. Moreover, an area-efficient SIS architecture with a sharing mechanism is presented to further reduce the number of in-pixel transistors.
A low parasitic capacitance low leakage switch and a gate-source voltage pre-storage method are proposed to further improve the linearity of the buffer. Nonlinear effects introduced by parasitic capacitance switching leakage, etc., have been investigated and solved by proposing low-parasitic and low-leakage switches. The linearity is improved without a power-hungry operational amplifier-based calibration circuit and a noticeable power consumption increment.
The proposed design is implemented using a standard 0.18-µm CMOS process with the active area of 102 µm2. At the power consumption of 5.6 µW, the measured linearity is −63 dB, which is nearly 27 dB better than conventional active pixel sensor (APS) implementation. The proposed low-power buffer circuit increase not only the performance of the SIS but also the lifetime of the smart perception system.
