Analyzing and assessing the performance of a microelectromechanical systems (MEMS)-based piezoresistive pressure sensor using a Silicon Carbide (SiC) rectangular membrane and C-shaped piezoresistive elements placed in a Wheatstone bridge arrangement is the aim of this work. The purpose of this study is to create a thorough mathematical model that will accurately forecast the performance characteristics of a MEMS piezoresistive pressure sensor that uses SiC as the sensing material and operates in harsh environmental conditions. To increase the sensitivity and linearity of the sensor response, the design purposefully places C-shaped piezoresistive elements at the membrane’s greatest stress points.
Based on thin-plate theory, a thorough mathematical model of the SiC-based MEMS piezoresistive pressure sensor is created to examine its sensitivity, stress and deflection properties. The model takes into account the effects of applied pressure, material characteristics and membrane geometry. The behavior and performance of the sensor are simulated and analyzed using MATLAB software under various structural parameters and environmental situations. The results are then further verified using COMSOL Multiphysics for Finite Element Analysis (FEA).
To verify the outcomes of the MATLAB simulation, FEA is carried out using COMSOL Multiphysics. The suggested SiC-based rectangular membrane with C-shaped piezoresistive elements performs exceptionally well in demanding and harsh environmental conditions, achieving a high sensitivity of 5.88 mV/V/MPa, which is higher than previously recorded values.
In this work, a new mathematical and simulation-based methodology for assessing a clamped edge SiC rectangular membrane with C-shaped piezoresistive pressure sensor is presented. By precisely predicting performance parameters prior to fabrication, the method enables structural optimization for increased stability and sensitivity under harsh circumstances.
