This review provides a comprehensive summary of the development of SiC power devices, focusing on their importance in the power semiconductor, and a thorough comparison with traditional silicon-based devices.
As a typical wide-bandgap semiconductor device, silicon carbide (SiC) based power devices are increasingly prominent in power conversion systems. They are gradually replacing traditional silicon-based devices as core components due to their advantages, such as high-voltage tolerance, high-temperature resistance, low on-state resistance and fast switching capabilities.
First, the review introduces the background of the power semiconductor devices and the physical characteristics of SiC. Then, the performance advantages of SiC device over silicon device are discussed in detail, particularly the significant improvements in high-temperature, high-frequency and high-voltage applications. In addition, this review delves into innovations in SiC power devices packaging and interconnection technologies, with special attention to the advancements in heat dissipation, thermal conductivity, short-circuit tolerance and high-frequency electromagnetic compatibility. Finally, the latest research progress in the design, performance optimization and reliability of SiC power devices is discussed.
This review aims to comprehensively demonstrate the potential and challenges of SiC power devices in power electronics and provide a comprehensive perspective for research and applications in this field.
