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Volume 12, Issue 5
1 October 2015
World Journal of Engineering Cover Image for Volume 12, Issue 5
Research Article| October 01 2015

Selection of semiconductor switches in high frequency inverter fitted contactless power transfer system for reducing input current distortion

;
Prabhat Chandra Ghosh
1
Department of Electrical Engineering, College of Military Engineering, Pune-411031, India
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;
Pradip K Sadhu
2
Electrical Engineering Department, Indian School of Mines (Under MHRD, Govt. of India), Dhanbad - 826004, India
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;
Debabrata Roy
3
Electrical Engineering Department, Batanagar Institute of Engineering, Management and Science, Kolkatata-141, India
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Soumya Das *
4
Department of Electrical Engineering, University Institute of Technology, Burdwan, WB-713104, India
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Author & Article Information
Publisher: Emerald Publishing
Received: January 31 2015
Accepted: June 29 2015
Online ISSN: 2515-8082
Print ISSN: 1708-5284
World Journal of Engineering (2015) 12 (5): 471–478.
https://doi.org/10.1260/1708-5284.12.5.471
Article history
Received:
January 31 2015
Accepted:
June 29 2015

This paper investigates the selection of semiconductor switches used in contactless power transfer (CPT) system. In the present paper a single phase high frequency full bridge inverter using different semiconductor switches like IGBT, MPOSFET and GTO has been considered. Harmonic injection in input current of the inverter for different semiconductor switches has been analyzed using PSIM software. The THD of input current of the inverter for the particular switching device has been determined by using Fourier Transforms. It has been observed that THD in case of the IGBT is minimised.

Keywords: Contactless power transfer, THD, PSIM, High frequency full bridge inverter, IGBT, Resonanance
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