Morphological, electrical and optical properties of γ- copper (I) iodide thin films by mist atomization technique

This research focuses on the effect of molar concentration of CuI thin film deposited by mist atomization technique. The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 0.35 x 10⁴ nm - 1.60 x 10⁴ nm was obtained as the concentration increases. The increment of thickness affects the electrical properties which is the resistivity and conductivity of CuI thin film. The resistivity of about 10¹ω cm to 10³ω cm was observed in those CuI thin films. For optical properties, the absorption coefficient and optical band gap of CuI was determined by using Tauc's plot. The high absorption coefficient of 10⁶ m^-1 is observed in those CuI thin films with bandgap between 2.84 to and 2.95eV obtained in this experiment.