Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver

Time‐depending solutions to the Boltzmann‐Poisson system in one spatial dimension and three‐dimensional velocity space are obtained by using a recent finite difference numerical scheme. The collision operator of the Boltzmann equation models the scattering processes between electrons and phonons assumed in thermal equilibrium. The numerical solutions for bulk silicon and for a one‐dimensional n⁺‐n‐n⁺ silicon diode are compared with the Monte Carlo simulation. Further comparisons with the experimental data are shown.