Novel 4H‐SiC BJT utilizing floating buried layer in base for high current gain, high current gain stability and high breakdown voltage

The purpose of this paper is to present a novel structure of 4H‐SiC bipolar junction transistor (BJT) to realize high current gain, high current gain stability, and high breakdown voltage.

A novel structure of 4H‐SiC BJT with floating buried layer in the base epilayer is presented. The simulation and optimization are done using the TCAD tool.

This novel structure is increasing the current gain effectively, at the same time, the current gain stability and breakdown voltage are higher comparing with the conventional structure.

The paper proposes a new “4H‐SiC FBL‐BJT” with high current gain, high current gain stability and high breakdown voltage.