... 17 05 2016 19 10 2016 05 12 2016 © Emerald Publishing Limited 2017 Emerald Publishing Limited Licensed re-use rights only Induction heating Semiconductor devices Power supply For years, silicon devices have dominated power electronic designs. Since the invention...

... of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value...

...Orazio Muscato; Wolfgang Wagner; Vincenza Di Stefano Purpose – The purpose of this paper is to deal with the self-heating of semiconductor nano-devices. Design/methodology/approach – Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct...

... as sub-threshold region). © Emerald Group Publishing Limited 2014 Mathematical modelling Semiconductor devices Silicon MOSFET modeling is facing difficulties to achieve accurate description of extremely scaled down devices. The reason is that many complicated new phenomena...

..., at the same time the losses in the most stressed semiconductor device are reduced by a factor of 2.25. Therefore, achieving higher power density is possible. Practical implications The proposed switch configuration is intended for high‐power (>500 KVA) industrial, marine and railway traction systems...

... thermal management challenges on the chip. The miniaturization coupled with the faster processing speeds, results in a very large quantity of heat being generated per unit volume in these devices. Thermal phenomena affect the reliability of semiconductor devices as the degradation of device thermal...

... Publishing Limited 2010 Capacitance Semiconductor devices Radio frequencies (RF) power device is considered as a very important basis for wireless communication technology. RF power lateral diffused metal‐oxide semiconductor (LDMOS) (Ren et al., 2002, 2000 ; Wood et al...

... capacitance, and increase the breakdown voltage as a result. Lijuan Wu can be contacted at: ljwu@cuit.edu.cn © Emerald Group Publishing Limited 2010 Frequencies Capacitance Electric power systems Semiconductor devices The rapid growth of wireless systems at radio frequencies (RF...

...C. Ertler; F. Schürrer Purpose The purpose of this paper is to present a new deterministic solution method to the coupled Boltzmann‐Poisson system for simulating semiconductor devices. Design/methodology/approach A non‐parabolic six‐valley model allows for the investigation of anisotropy...

...A. Domaingo; M. Galler; F. Schürrer Purpose To present a new direct solution method for the Boltzmann‐Poisson system for simulating one‐dimensional semiconductor devices. Design/methodology/approach A combination of finite difference and finite element methods is applied to deal...

...=6×10⁻¹⁵ s. © Emerald Group Publishing Limited 2005 Electrically operated devices Semiconductor devices Monte Carlo simulations The Direct Simulation Monte Carlo (DSMC) algorithm is a stochastic method that solves the Boltzmann equation by replacing the distribution...

... Publishing Limited 2004 For comparing the BTE‐Poisson and the MC solutions, we choose two benchmarks. Electronic engineering Semiconductor devices Monte Carlo simulation Silicon In modern days, ultra‐small silicon devices, high electric fields and high field‐gradients are encountered...