... the conclusions are given in Section 5. The schematic structure and the cross section of the SG MOSFETs are shown in Figure 1 with radius of semiconductor cylinder R, oxide thickness T_ox. It can be seen that the gate surrounds the conducting cylindrical silicon...

...Xose M. Lopez‐Fernandez; Giovanni Mascali; Vittorio Romano Purpose This paper intends to present a hydrodynamical model which describes the hole motion in silicon and couples holes and electrons. Design/methodology/approach The model is based on the moment method and the closure of the system...

... by applying a finite element Galerkin approach. Findings Good agreement with shock‐capturing “WENO solutions” is obtained for n⁺‐n‐n⁺ silicon diodes. The anisotropy due to the six‐valley model affects considerably macroscopic quantities at the beginning...

... we have introduced the characteristic function Equation 24 Additionally, O_ε and O_μ are the order of the polynomials in energy and angular direction, respectively. © Emerald Group Publishing Limited 2005 Semiconductor devices Silicon Simulation...

...Zsolt Szabó; György Kádár; János Volk Purpose The paper presents the band gap computation in one‐ and two‐dimensional photonic crystals built up from porous silicon. The frequency dispersion of the dielectric materials is taken into account. Design/methodology/approach The behavior...

... and K₂ are the anisotropy constants. In the case of a pure cubic iron single crystal, these are K₁=0.48×10⁵ J/m³ and K₂=0.05×10⁵ J/m³ (Jiles, 1991). For steels, their values depend on the silicon content (Littmann, 1971...

... processes between electrons and phonons assumed in thermal equilibrium. The numerical solutions for bulk silicon and for a one‐dimensional n⁺‐n‐n⁺ silicon diode are compared with the Monte Carlo simulation. Further comparisons with the experimental data are shown. It is useful...

...Alfred Mühlbauer; Andris Muiznieks; Gundars Ratnieks; Armands Krauze; Georg Raming; Thomas Wetzel The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal...

...Alfred Mühlbauer; Andris Muiznieks; Gundars Ratnieks; Armands Krauze; Georg Raming; Thomas Wetzel The present paper gives an overview of the complex mathematical modelling of industrial Czochralski (CZ) and floating‐zone (FZ) processes for the growth of large silicon single crystals from melt...

...Alexandre Richardson; Laurent Cirio; Laurent Martoglio; Odile Picon A numerical and experimental analysis of an original inverted microstrip transmission line on standard Silicon substrate for telecommunication applications is proposed. Simulations have been made using a time domain method...