This study aims to develop a quantum photothermoelastic model for porous semiconductors that couples thermal, mechanical, carrier diffusion, void and micro-concentration effects. Spatiotemporal nonlocality and a Gurtin–Pipkin–Moore–Gibson–Thompson heat conduction model are incorporated to capture quantum transport, thermal memory and finite-speed wave propagation under internal heat generation.
The governing equations couple quantum carrier transport, micro-concentration diffusion, porosity evolution and spatiotemporal nonlocal elasticity within a unified thermoelastic framework. Heat transport is described using a memory-dependent Gurtin–Pipkin kernel within the Moore–Gibson–Thompson model. The problem is solved analytically in the Laplace domain, with Zakian’s algorithm used for numerical inversion. Model validity is assessed through limiting cases and parametric studies of nonlocality, quantum effects and thermal memory.
Numerical results show that spatial and temporal nonlocality significantly affect the thermal, mechanical, carrier and microstructural fields. The GP-MGT model effectively captures thermal memory, while quantum corrections strongly influence carrier diffusion and thermoelastic coupling. The results also indicate reduced stress localization and enhanced thermal redistribution, with good agreement with established models.
The study is limited to a one-dimensional isotropic porous semiconductor with linear internal heat generation and idealized boundary conditions. Nonlinear, anisotropic, electromagnetic and experimental effects are not considered. Nevertheless, the framework provides a basis for future multidimensional, nonlinear and experimentally validated extensions.
The model offers improved predictions of thermal management, stress evolution and carrier transport in semiconductor devices under laser and high-frequency thermal loading. It has potential applications in MEMS/NEMS, photodetectors, infrared sensors, semiconductor lasers, energy-harvesting systems and multifunctional metamaterials.
This work presents a unified quantum photothermoelastic framework integrating spatiotemporal nonlocal elasticity, quantum carrier transport, micro-concentration diffusion, porous microvoid mechanics and hybrid Gurtin–Pipkin–Moore–Gibson–Thompson heat conduction. To the best of the authors’ knowledge, such an integrated formulation for porous semiconductors with diffusion and thermal memory has not been previously reported, providing new insights into coupled multiphysics interactions in quantum thermoelastic nanostructures.
