Thick film microstrip rejection filter with improved Q using overlay

In this paper studies on the lab formulated fritless silver thick film paste with two different binder compositions that have been used to fabricate λ/2 microstrip rejection filter in the X and Ku band are reported. These have been compared with ESL (USA) paste and copper thin film metallization for the same circuit. The thick film circuits were overlayed with TiO₂ thick film of different thickness and changes in the characteristics studied. In the X band, the Q of the filter improves with overlay and is also dependent on the Ag paste formulation, whereas in the Ku band there are no thick film paste dependent properties observed due to overlay. Thickness of overlay and metallization paste formulation dependent factors should be taken into consideration during fabrication of high density and multi‐layer microwave integrated circuits.