The aim of this paper is to formulate the effect of the process variation on various leakage currents and subthreshold swing factor in FinFET devices. These variations cause a large spread in leakage power, since it is extremely sensitive to process variations, which in turn results in larger temperature variations across different dies.
Owing to large temperature variation within the die, the authors investigate the variation of various leakage currents with absolute die temperature.
The results obtained on the basis of the model are compared and contrasted with reported numerical and experimental results. A close match was found which validates the analytical approach.
The analytical modeling of subthreshold leakage current, subthreshold swing, gate leakage current and its variation with process parameters are carried out in this paper.
