The purpose of this paper is to demonstrate the influence of annealing treatment on the photovoltaic properties of the solar cell based on ITO/PEDOT:PSS/ZnO:P3HT/Ag.
The influence of the annealing temperature and time on the P3HT/ZnO interface morphology and the ITO/PEDOT:PSS/ZnO:P3HT/Ag solar cell performance was discussed. The morphology and the current‐voltage (J‐V) characteristics were investigated by atomic force morphology (AFM) and solar simulator with an AM 1.5 G filter under an irradiation intensity of 100 mW cm−2. The light intensity was calibrated using a standard silicon photovoltaic solar cell.
The photovoltaic performances were found to have been greatly enhanced by an annealing treatment at 145°C for 30 min.
The paper demonstrates that the annealing treatments play a crucial role in improving the morphology and J‐V performance of the ITO/PEDOT:PSS/ZnO:P3HT/Ag solar cell.
