The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.
In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison.
By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 108 cm−2. The surface of the AlN layer with that nucleation layer was smoother than its counterparts.
This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.
