Issues

Special Issue: Advances in Growth, Characterization, and Applications of III-Nitrides Compound Related Materials. Guest Editors: Hock Jin Quah, Sha Shiong Ng, Way Foong Lim, Zainuriah Hassan

Guest editorial

Hock Jin Quah; Sha Shiong Ng; Way Foong Lim; Zainuriah Hassan
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Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

Zulkifli Azman; Nafarizal Nayan; Megat Muhammad Ikhsan Megat Hasnan; Nurafiqah Othman; Anis Suhaili Bakri; Ahmad Shuhaimi Abu Bakar; Mohamad Hafiz Mamat; Mohd Zamri Mohd Yusop
View articletitled, Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
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N-face GaN substrate roughening for improved performance GaN-on-GaN LED

Ezzah Azimah Alias; Muhammad Esmed Alif Samsudin; Steven DenBaars; James Speck; Shuji Nakamura; Norzaini Zainal
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Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma

Anis Suhaili Bakri; Nafarizal Nayan; Chin Fhong Soon; Mohd Khairul Ahmad; Ahmad Shuhaimi Abu Bakar; Wan Haliza Abd Majid; Nur Amaliyana Raship
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The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Ahmad Sauffi Yusof; Zainuriah Hassan; Sidi Ould Saad Hamady; Sha Shiong Ng; Mohd Anas Ahmad; Way Foong Lim; Muhd Azi Che Seliman; Christyves Chevallier; Nicolas Fressengeas
View articletitled, The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures
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Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED

Muhammad Esmed Alif Samsudin; Yusnizam Yusuf; Norzaini Zainal; Ahmad Shuhaimi Abu Bakar; Christian Zollner; Michael Iza; Steven P. DenBaars
View articletitled, Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED
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Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Mohd Ann Amirul Zulffiqal Md Sahar; Zainuriah Hassan; Sha Shiong Ng; Way Foong Lim; Khai Shenn Lau; Ezzah Azimah Alias; Mohd Anas Ahmad; Nur Atiqah Hamzah; Rahil Izzati Mohd Asri
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Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

Nur Atiqah Hamzah; Mohd Anas Ahmad; Rahil Izzati Mohd Asri; Ezzah Azimah Alias; Mohd Ann Amirul Zulffiqal Md Sahar; Ng Sha Shiong; Zainuriah Hassan
View articletitled, Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode
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