This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The change of the AlN atomic structure with sapphire orientation was associated to the interface between the AlN and the sapphire. The results from this study would provide a guideline in selecting suitable orientation of sapphire for obtaining desirable AlN crystals, in particular, for reducing threading dislocation density in the AlN/sapphire templates for developing UV LEDs.
The approach of atomic structure by visualization for electronic and structural analysis numerical method to develop shape of atomic geometry to evaluate which plane are more suitable for the AlGaN technology UV-LED based.
The calculation based on ratio on first and second layers can be done by introduction of lattice constant.
With plane’s color of cutting plane on bulky materials, all the shape looks the same.
By implementing this method, the authors can save time to find the most suitable plane on the growth structure.
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