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Keywords: InGaN
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Journal Articles
Mohd Ann Amirul Zulffiqal Md Sahar, Zainuriah Hassan, Sha Shiong Ng, Way Foong Lim, Khai Shenn Lau, Ezzah Azimah Alias, Mohd Anas Ahmad, Nur Atiqah Hamzah, Rahil Izzati Mohd Asri
Journal:
Microelectronics International
Microelectronics International (2021) 38 (3): 119–126.
Published: 19 July 2021
...Mohd Ann Amirul Zulffiqal Md Sahar; Zainuriah Hassan; Sha Shiong Ng; Way Foong Lim; Khai Shenn Lau; Ezzah Azimah Alias; Mohd Anas Ahmad; Nur Atiqah Hamzah; Rahil Izzati Mohd Asri Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum...
Journal Articles
Ahmad Sauffi Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, Way Foong Lim, Muhd Azi Che Seliman, Christyves Chevallier, Nicolas Fressengeas
Journal:
Microelectronics International
Microelectronics International (2021) 38 (3): 105–112.
Published: 08 July 2021
... and the growth process of InGaN/GaN heterostructures. Design/methodology/approach To examine this effect, the InGaN/GaN heterostructures were grown using Taiyo Nippon Sanso Corporation metal-organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown...
