...°C for 1, 2, 3 and 4 hours. The characteristics current–voltage for fresh and aging samples in the range of voltage from 0-15 V were made. The temperature of OLEDs samples in real-time with a thermographic camera was measured too. Additionally, scanning electron microscope image of surface Al cathode...

...Joon Huang Chuah; David Holburn Purpose The purpose of this paper is to design a very low‐noise transimpedance amplifier (TIA) for a novel multi‐pixel CMOS photon detector which performs secondary electron (SE) detection in the scanning electron microscope (SEM). Design/methodology/approach...

... Limited 2013 Reactive sputtering InN Silicon (110) Scanning electron microscope X‐ray diffraction Films (states of matter) Radio frequency identification Silicon The surface morphology of the InN films grown on different orientation of Si substrates is investigated by SEM technique...