...Piotr Kowalik; Edyta Wrobel; Janusz Mazurkiewicz Purpose The purpose of this paper is to present the possibility of technology of chemical metallization for the production of electrodes and resistors based on Ni–P alloy on silicon (Si), alundum (Al₂O₃) and low temperature...

... The principal mechanism of melting of a metallization track is linked to the heat dissipation at the interface of solid and liquid phases under conditions of thermal shock. The authors estimated the mechanical stresses in subsurface layers of silicon in the proximity of a non-stationary thermal source...

...Tijjani Adam; U. Hashim Purpose – The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography...

... of a silicon solar cell or a module. Similar test could help predict the amount of degradation or even the failure of PV modules. Energy saving using photovoltaic (PV) solar cells, as an alternative source of energy, has practically inspired the minds and souls of many scientists and research engineers since...

... analyser. T.S. Dhahi can be contacted at: sthikra@yahoo.com © Emerald Group Publishing Limited 2013 Nanogap electrodes Double‐layer capacitance Dielectric‐based biomolecular detection Silicon Sensors Equation 2 To electrically characterize the various...

... (111), and (c) Si (110) substrates Maryam Amirhoseiny can be contacted at: maa10_phy070@student.usm.my © Emerald Group Publishing Limited 2013 Reactive sputtering InN Silicon (110) Scanning electron microscope X‐ray diffraction Films (states of matter) Radio frequency...

... deposition at different sputtering time and thermal oxidation techniques. Design/methodology/approach Zirconium is deposited on silicon substrate at three different sputtering time; 30‐, 60‐ and 120‐s continued with an oxidation process conducted at 500°C for 15 min to form ZrO_x thin films...

...L.S. Chuah; Z. Hassan; S.S. Tneh; M.A. Ahmad; S.K. Mohd Bakhori; Y. Yusof Purpose The purpose of this paper is to propose a simple physical evaporation route in which catalyst‐free zinc oxide (ZnO) nanoscrewdrivers were deposited on silicon (Si) (111) substrates. Design/methodology/approach...

...L.S. Chuah; Z. Hassan; S.S. Tneh; S.G. Teo Purpose The purpose of this paper is to demonstrate the n‐ZnO/p‐Si Schottky photodiodes. Design/methodology/approach A Zn film was deposited on silicon substrate by dc sputtering deposition technology from high purity zinc (Zn) targets. Then, the Zn...

.... Design/methodology/approach ZnO microrods were synthesized using sol‐gel immerse technique on oxidized silicon (Si) substrates. The oxidized Si substrates were immersed in ZnO aqueous solution for different times ranging from three to five hours. The surface morphologies of the ZnO microrods were...

...A.F. Abd Rahim; M.R. Hashim; N.K. Ali Purpose The purpose of this paper is to describe a very low‐cost way to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using a conventional and cost effective technique in which thermal evaporator with PS acts...

...) methods. Design/methodology/approach Metal‐oxide‐silicon carbide (MOSiC) structures with varying oxide thickness have been fabricated on device grade 4H‐SiC substrate. Ni has been used for gate metal on thermally oxidized Si‐face and a composite layer of Ti‐Au has been used for Ohmic contact...

...Asmiet Ramizy; Wisam J. Aziz; Z. Hassan; Khalid Omar; K. Ibrahim Purpose The purpose of this paper is to describe how fabricate solar cell based‐on porous silicon (PS) prepared by electrochemical etching process is fabricated and the effect of porosity layer on the solar cell performance...

...Asmiet Ramizy; Khalid Omar; Z. Hassan Purpose The purpose of this paper is to synthesize Si (porous silicon (PS)) by laser‐induced etching (LIE) technique. The LIE process has the added advantage of a controlling size and optical properties without using of electrodes. The LIE process...

...M. Jagadesh Kumar; C. Linga Reddy Purpose To develop a silicon lateral Schottky rectifier with low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier. Design/methodology/approach A two...

...H. Ymeri; B. Nauwelaers; K. Maex; D. De Roest New analytical approximation for the frequency‐dependent impedance matrix components of symmetric VLSI interconnect on lossy silicon substrate are derived. The results have been obtained by using an approximate quasi‐magnetostatic analysis of symmetric...

...W.J. Wang; R.M. Lin; Y. Ren A single wafer silicon condenser microphone with a novel single deeply corrugated diaphragm is presented in this paper. The microphone diaphragm with corrugation depth of 100 μm is only 1 mm² in area, while the open‐circuit sensitivity as high as 9.8...