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Keywords: p-GaN
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Journal Articles
Nur Atiqah Hamzah, Mohd Anas Ahmad, Rahil Izzati Mohd Asri, Ezzah Azimah Alias, Mohd Ann Amirul Zulffiqal Md Sahar, Ng Sha Shiong, Zainuriah Hassan
Journal:
Microelectronics International
Microelectronics International (2021) 38 (3): 127–134.
Published: 02 August 2021
... to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the active region). Attention was paid to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the active region). Design/methodology/approach Indium gallium nitride (InGaN)–based...
