The purpose of this paper is to characterize electrical parameters of amorphous Ni‐P resistive layers used for fabrication of precise resistors.
Ni‐P resistive layers were produced by the chemical process in water solution using Ni2 + and H2PO2− ions. The paper presents the results of the studies concerning the influence of bath acidity and conditions of thermal stabilization on the structure and temperature coefficient of resistance of Ni‐P alloy.
The temperature coefficient of resistance of amorphous Ni‐P layers was found to depend significantly on the parameters of chemical metallisation process. It was stated that the changes of through‐casing resistivity versus the acidity of technological solution have roughly parabolic characteristics.
In this paper, it was at first explained how the changes of the structure of Ni‐P resistive layers depend on their temperature coefficient of capacitance.
